Materials Science and Engineering Semiconductors

Machine learning algorithms allow analysis and characterization of the atomic arrangement of silicon surface superstructures without the need for human expertise.

In a recent study published in the journal ACS Catalysis researchers from Kanazawa University describe novel scanning electrochemical cell microscopy measurements to determine sites of photoelectrochemical activity in titanium dioxide nanotubes.

Researchers succeed in the direct bonding of diamond and gallium nitride (GaN) at room temperature and demonstrate that the bond can withstand heat treatments of 1,000℃, making it ideal for the high temperature fabrication process of GaN-based devices. GaN-on-diamond semiconductor material will allow for the next generation of high power, high frequency devices.

Osaka Prefecture University develops a method to design and control the path of electron flow in a polycrystalline material. Using epitaxial growth approach, researchers address the electrical conductivity problem of thin film materials by realizing a highly conductive in-plane orientation of a metal-organic framework. Furthermore, they show that it is possible to fabricate oriented thin film patterns by integration with UV lithography technology.

Researchers at Osaka Prefecture University have established an approach to identify the orientation of molecules and chemical bonds in crystalline organic-inorganic hybrid thin films deposited on substrates using Fourier transform infrared spectroscopy (FT-IR) and polarized infrared light with a 3D-printed attenuated total reflectance (ATR) unit. This inexpensive method with laboratory-grade equipment quickly reaches the crystal-structure model of even extremely thin films of less than 10 nm.

A research team, affiliated with South Korea's Ulsan National Institute of Science and Technology (UNIST) has succeeded in patterning the two-dimensional (2D) metal electrode into desired shapes on the 4-inch diameter silicon substrate.

A recent study, affiliated with South Korea's Ulsan National Institute of Science and Technology (UNIST) has presented a dynamic transport control mechanism for colloidal particles by developing a micro-/nanofluidic DP platform (MNDP).

An international team of researchers, affiliated with UNIST has paved the way for the development of next-generation batteries, targeting high-performance electric vehicles (EVs).

A recent study, affiliated with South Korea's Ulsan National Institute of Science and Technology (UNIST) has presented a new perovskite light-emitting diodes (PeLEDs) with high flexibility.

Tohoku University researchers have developed a technique using a hollow sphere to measure the electronic and optical properties of large semiconducting crystals. The approach improves on current photoluminescence spectroscopy techniques and could lead to energy savings for mass producers, and thus consumers, of power devices.

Tohoku University's Center for Innovative Integrated Electronic Systems (CIES), led by Professor Tetsuo Endoh (Graduate School of Engineering at Tohoku University) has announced success on a collaboration between CIES and semiconductor test equipment supplier Advantest Corporation.