SISPAD 2011 - International Conference on Simulation of Semiconductor Processes and Devices
This conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipments for integrated circuits.
Topics:
- Simulation and modeling based on continuum and/or particle methods for
all sorts of devices including next generation CMOS devices, emerging
memory devices, optoelectronic devices, lasers, TFTs, organic electronic
devices, micro/nano sensors, power electronic devices and other
semiconductor-based "green" devices, spintronics devices, tunnel FETs,
SETs, carbon-based nanodevices, molecular devices, and bioelectronic
devices.
- Fundamental aspects of device modeling and simulation such as quantum
transport, fluctuation, noise, and reliability issues.
- All sorts of process simulations and modeling based on continuum
and/or atomistic approaches, including the first-principles material
design and growth simulation of nano-scale fabrication.
- Compact modeling for circuit simulation, including high frequency
applications.
- Process/device/circuit simulation in context with system design and
verification.
- Equipment, topography, lithography modeling and algorithms.
- Interconnect modeling and algorithm including noise and parasitic effects.
- Advanced numerical methods and algorithms including grid generation,
user-interface, and visualization.
- High precision metrology for the modeling of semiconductor devices and
processes.
For more details, contact: hiroki(at)kit.ac.jp
