Professor Atsufumi Hirohata

Atsufumi Hirohata joined the Center for Science and Innovation in Spintronics in Tohoku University in Octiber 2023. Previously he was at the Department of Electronic Engineering in the University of York since September 2007. He has over 20 years of experience in spintronics, ranging from magnetic-domain imaging to spin-current interference. He is currently an editorial board member of Journal of Physics D and Spin. He is the President-Elect and a member of both Administrative and Techical Committees of the IEEE Magnetics Society.

Before coming to York, he was a researcher at RIKEN, a Japanese governmental research institute, for over two years, where he designed a spin-current interference device, which can be used as a spin operation in a spintronic three-terminal transistor. He was before working as a postdoctoral researcher at Tohoku University, and successfully fabricated a perfectly ordered epitaxial full-Heusler alloy films, which was the first report to their knowledge and was acknowledged by several awards. He also worked as a postdoctoral associate at Massachusetts Institute of Technology, where he demonstrated basic function of a phase-change memory, which has been recently released in a market by Intel. He received his PhD in Physics at the University of Cambridge in 2001 and then served as a research associate at the Cavendish Laboratory in order to complete his study on spin detection of optically pumped spin-polarised electrons in a semiconductor with using a ferromagnetic overlayers, which attracted great interest, resulting a few invited talks and papers. He was originally graduated from Keio University for his BSc and MSc studies in Physics.

His present research interests include fabrication of a spin operator and nano-spin motor as well as growth of a half-metallic film. Further details can be found in research and publications.

Research Interests:

Spintronics; quantum nanoelectronics

Teaching Interests:

Introductory nanotechnology; Nanoelectronics; Mathematics; Information Storage and Spintronics