Naoteru Shigekawa

Prof. Shigekawa's research interest includes fabrication of heterointerfaces and advanced hybrid semiconductor devices such as multijunction solar cells and heterojunction bipolar transistors using surface activated bonding and their characterization.

He was with the Nippon Telegraph and Telephone (NTT) Laboratories, NTT Corporation, Atsugi, Japan, between 1986 and 2011. He was engaged in research on hot-carrier transport in III-V compound-semiconductor heterostructures and electron devices at NTT Laboratories. From 1993 to 1994, he was a Visiting Scientist with the Department of Physics, University of Nottingham, Nottingham, U.K. Since 2011, he has been with the Graduate School of Engineering, Osaka City University, Osaka, Japan, as a Professor.

Education

Ph.D in Physics, University of Tokyo (1993)
M.S degree in Physics, University of Tokyo (1986)
B.S degree in Physics, University of Tokyo (1984)

Research Interests

Electron transport properties
Widegap semiconductors
Semiconductor heterostructures
Multi junction solar cells
Surface activated bonding

Selected publications

Y. Idutsu, J. Liang, H. Nishimura, D. G. Kim and N. Shigekawa, "Modulation of Characteristics of Si Solar Cells by Luminescence-Downshifting Zn-Based Nanoparticles with Mn doped," 2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2020, pp. 0234-0237, doi: 10.1109/PVSC45281.2020.9300637.

R. Kozono, S. Yoon, J. Liang and N. Shigekawa, "GaAs/Si Double-Junction Cells Fabricated by Sacrificial Layer Etching of Directly-Bonded III-V/Si Junctions," 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, pp. 1018-1020, doi: 10.1109/PVSC40753.2019.8980757.

Y. Idutsu et al., "Effects of Layered Cadmium-Based Nanoparticles on Si Solar Cells," 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, pp. 1753-1755, doi: 10.1109/PVSC40753.2019.8981279.

K. Matsuura, J. Liang, K. Maezawa and N. Shigekawa, "Low-Loss Characteristics of Metal-Foil-Based Passive Components by Surface-Activated Bonding Technologies," in IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 3946-3952, Sept. 2019, doi: 10.1109/TED.2019.2928620.

Y. Ohno, R. Miyagawa, H. Yoshida, S. Takeda, J. Liang and N. Shigekawa, "Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature," 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D), 2019, pp. 2-2, doi: 10.23919/LTB-3D.2019.8735300.

For more publications, please visit:

https://ieeexplore.ieee.org/author/37267273200

https://orcid.org/0000-0001-7454-8640